The influence of constant magnetic field on the structure and properties of monocrystalline silicon

Abstract

Issues statement. In the conditions of continuous increasing the requirements to pureness, structural perfectness of the silicon crystals and their homogeneity, is necessary to expand and deepen the knowledge about properties of silicon as well improve the methods of silicon processing for obtaining a necessary structure and properties. Annealing, processing  of grown silicon crystals in magnetic or electric fields in perspective may create conditions for the management of the structure and properties at any stage of production. In contemporary technical literature the data about research the influence of physical processing methods at the properties of silicon are found very rare. The investigations of physical processing methods of the silicon monocrystals (thermal processing in the subcritical temperature ranges, magnetic processing) in the perspective can give a possibility of management their structure and properties at the various stages of production. As well applying new methods of silicon processing may disclose perspectives of using the different properties of silicon as high hardness, Young modulus, compressive strength, and chemical resistivity. Subject. The subject of work was investigation of influence of magnetic processing for targeted management structure and properties of material with aim to expand the using of silicon in various applications. Conclusions. The magnetic processing of monocrystalline Cz − Si (alloyed and unalloyed) has been carried out. Has been noted the influence of weak constant magnetic field on the structure, mechanical and electrophysical properties of semiconductor silicon, namely: increasing of density the internal defects, forming of polycrystalline structure in silicon, significant increment of microhardness and considerable degradation of minority carriers time of life. Have been suggested the qualitative explanations of magneto-stimulated phenomena in studied specimens. It has been found that using a weak constant magnetic field is possible to manage the properties of silicon by means of acceleration, or slowing the shear and shear-diffusion phase transformations.